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CRM for the calibration of high magnification KRC-HMC-100

KRC-HMC-100
Pattern width: 5 certified widths of 20 nm ~ 80 nm Pattern pitch: 5 certified pitchs of 100 nm ~ 900 nm

CRM for the Calibration of Nano Step-height KRC-NSC-100

KRC-NSC-100
Pattern height: 100 nm Pattern pitch: 3, 5, 10 um

CRM for the characterization of AFM tip KRC-ATC-200

KRC-ATC-200P [CC-X]
Trench width: 50 nm, 100 nm, 200 nm Pattern width: 50 nm (not certified)
Trench Height: 100 nm (not certified) Pattern length:4.0 mm (certified area: 3.0 mm from center)

CRM for the Checking of Tip Shape KRC-TSC-200

KRC-TSC-200
Pattern width: 180 nm Trench width: 400 nm
Pattern height: 1,000 nm (not certified) Pattern length: 4.0 mm (certified area: 3.0 mm from center)

CRM for the characterization of SSCM KRC-SSRM-100

KRC-SSRM-100
Activated layer width: 5 nm, 10 nm, 15 nm, 20 nm, 40 nm Pattern length: 4.0 mm (certified area: 3.0 mm from enter)
Roughness (Rq): max 0.5 nm Defectivity: max 2% (max 60 um within 3,000 μm certified area)
Traceability: Si lattice constant measured by TEM

Nano Thickness Calibrator KRC-NTC-HfO2

KRC-NTC-HfO2
Nominal thickness: 5 nm, 10 nm, 15 nm, 20 nm Substrate: SiO2(2 nm) / Si(100) wafer
Film deposition: Atomic Layer Deposition Certification method: Mutual calibration with TEM and MEIS
Traceability: Silicon lattice constant measured by TEM

Multiple Layer Film KRC-MLC

KRC-MLF-100
Nominal thickness: 10 nm, 20 nm, 50 nm Material: Si/Ge multiple layers
Substrate: Si(100) Specimen size: 10 mm x 10 mm x 0.65 mm
Traceability: STEM/EDS line profile, HR-TEM image
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